FPA106 array equivalent, light reflection emitter / sensor array.
The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon npn phototransistor. The axial radiant intensity of the diode and the axial response o.f the phOtotransistor are perpendicular to the face of the device; therefor.
Image gallery
TAGS
Download (Size : 170.23KB)